Advanced Microsystems for Automotive Applications 2000 by E. Mounier, S. Leroy, M. Waga (auth.), Dr. Sven Krüger,

By E. Mounier, S. Leroy, M. Waga (auth.), Dr. Sven Krüger, Wolfgang Gessner (eds.)

Microsystems are an enormous luck think about the car undefined. for you to fulfil the purchasers' requests for security comfort and automobile economic system, and to meet environmental standards, microsystems have gotten essential. hence a lot of microsystem purposes got here into the dialogue. With the overseas convention AMAA 2000, VDI/VDE-IT offers a platform for the dialogue of all MST correct elements for car functions. The convention lawsuits assemble the papers via authors from vehicle providers and manufacturers.

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E. SoItis et al. -. :-=------=-~ 100 200 300 400 500 Tempe rature (QC) b) Fig. 1 a/b . 0 nm layers (4 ' and 5 ') , respectively Development of Highly Active Catalyst 31 There are large differences in the light- off temp eratur es and va lues of m aximum co nversion between these samples. We define the ligh t-off temperature as the temperature w here co nve rsion reaches half of its m aximum value. Itis sugges ted that this temp eratur e sho uld be related to the numb er of ca talytic reaction sites and their activity .

In this array , two fields are pres sure sensitive and two fields act as a reference. Th e differential capacitive signal is converted into a digit al bitstream by a Sigma Delta Modul ator. Th e complete Iinearisation, offset-, sensitivity- and temperature compen sation is perform ed in the digital dom ain. The resulti ng signal is either con verted back to an analogue ratiometric output (KP120) or can be prov ided as digital interface directly to a controller (SPI interfac e in KPlOO). With the digital interface the controller can activate features like self-diagnosis even for specific sensor parts (See functi onal block diagram / Fig .

V- 200 300 400 500 Temperature , QC Fig . 2. 25 nm. Heating rate is 4 C/min . R= 1. 2. 0 c 0 'iii ..... 17 5 0 100 - --"" 200 300 400 500 Tem perature, QC Fig. 3. 25 nm . Heating rate is 4 0 C/min. R=l . Development of Highly Active Catalyst 50 ;:i( 0 ,.... 9 .... 17 5 11 11 I1 I1 11 11 11 40 11 I1 30 11" I1 I1 U1 Q) ~ t:: I1 I1 11 20 11 11 0 U 33 11 IO 11 0 lOO 200 300 400 500 Temperature, QC Fig . 4. 25 nm . Heating rate is 4 0 C/m in . R=1. 50 R=O. 17 51 I I 40 I ~ t:: 1 20 I I I I I I o U I I I I I U1 Q) :--Y1 IC3 H d' o 30 ....

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